Abstract
The energetic and structural properties ofSiH2 adsorbed on the single dimer vacancy (SDV) of theSi(100)-c(4 × 2) surface have been studied by using empirical tight-binding (ETB) total energy calculations. The adsorptionsof SiH2,SiH2 with a hydrogenadatom (SiH2+H)and SiH2 with twohydrogen adatoms (SiH2+2H) on the Si(100) surface with SDV structure have been studied. Threepossible sites (A, B and C) are found in each case. Adsorbing ofSiH2 or H on the SDV makes the structure of the SDV change. When a unit ofSiH2 is adsorbed on the SDV, the A site is more stable than the B site. IfSiH2+H orSiH2+2H is adsorbed on the SDV, the relative stability of the A site and B site reverses. The C siteis found to be the least stable site in all cases.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
