Significantly improved photo carrier injection by the MoS2/ZnO/HNP hybrid UV photodetector architecture

Abstract

A unique ultraviolet (UV) photodetector architecture of MoS2/ZnO/HNP is explored and significantly increased photocurrent (Iph) of 4 × 10−3 A is demonstrated under the 385 nm illumination of 54.9 mW/mm2 at 10 V. This leads to the superior device performance factors: i.e., photoresponsivity of 21,111 mA/W, detectivity of 7.9 × 1011 jones and EQE of 6,800 %. These device performance factors confirm that the proposed photodetector configuration is superior as compared to the similar versions of ZnO-based UV photodetectors. The hybrid MoS2/ZnO/HNP architecture is constructed by the 2-D transition metal dichalcogenide MoS2 nanoflakes, wide-bandgapZnO quantum dots (QDs) and plasomonic PdAg hybrid nanoparticles (HNPs). The increased Iph is related to the hot carrier injection through the strongly improved localized surface plasmon resonance (LSPR) by the PdAg HNPs and additional photo carriers from the 2-D MoS2 nanoflakes on top of the original photo-induced carriers in the ZnO QD layer. The PdAg HNPs are fabricated by a unique two-step solid-state dewetting (SSD) technique, having the core-shelled PdAg NPs with the high-density small background Ag NPs. This HNP configuration offers very high-density hot spots and significantly improved LSPR. The photocurrent enhancement of MoS2/ZnO/HNP architecture is systematically studied by the finite-difference time-domain (FDTD) simulations.