Abstract
Bi3-xCexTiNbO9 (BTN-100xCe, x = 0, 0.01, 0.03, 0.05, 0.07, 0.09, 0.11) piezoelectric ceramics with ultra-high Curie temperature were fabricated by a solid-state sintering method, and the effect of Ce doping on the structure, dielectric and piezoelectric properties of the ceramics was investigated. All ceramic samples possess a single Aurivillius phase and Ce ions enter both A- and B-sites. Dense microscopic morphology with a remarkable decrease of grain size can be observed due to Ce doping. The resistivity markedly increases after Ce modification, and a significantly enhanced piezoelectric constant d33 of 17.1 pC/N can be achieved in the optimized BTN-7Ce ceramics, which is nearly 6 times that of pure Bi3TiNbO9 (d33 ≈ 3 pC/N). In addition to ultra-high Curie temperature (TC = 886.5 °C) and relatively high resistivity (ρ = 1.2 × 106 Ω cm @ 500 °C), the BTN-7Ce ceramics should be very promising for piezoelectric sensor under the application in high temperature conditions.
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