Abstract

A unique combination of high response and fast response-recovery is still a challenge in the development of room-temperature gas sensors. Herein, we demonstrated the on-chip growth of nanojunction-networked SnO2 NW sensors to work under UV-radiation at room temperature. The morphological, compositional, and structural properties of synthesized SnO2 nanowires were examined using field emission electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy, respectively. The results presented the SnO2 NWs with smooth surfaces were entangled between the Pt electrode. Besides, the internal properties showed the SnO2 NWs were crystallized as the tetragonal rutile structure of SnO2. The use of UV-radiation with the optimum intensity of 50 μW/cm2 increased the gas response to 5 ppm NO2 up to 7-fold, while response and recovery times decreased about 8- and 4-fold, respectively. Moreover, alternative use of pulsed UV-radiation (provided only during the air recovery phase) can enhance significant gas response as compared with continuous UV-radiation. The enhancement of gas response could be attributed to the photo-adsorption and -desorption of NO2 molecule due to the photogeneration of electron-hole pairs. The combination of NW-NW nanojunctions and pulsed UV-radiation is expected to be a novel strategy for high-performance room temperature gas sensors.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.