Abstract
Silicon nanowires (Si NWs) like structures in the form of nanosheets are the building blocks for future transistors in the most advanced complementary metal–oxide–semiconductor technologies. However, Si NWs with few nanometers in diameter suffer from severe difficulties with respect to efficient impurity doping. These difficulties can be overcome by a novel doping concept for Si NWs comparable to the modulation doping approach known from III–V semiconductors. Modulation doping means that the parent dopant atoms are spatially separated from the volume that is to be doped by embedding them into an adjacent material with a higher bandgap. Herein, Al‐doped SiO2 shells around the Si NWs are used for the experimental realization of modulation doping. In two independent experiments, a significant reduction of the electrical resistance of Si NWs by several orders of magnitude is measured, when compared to the resistance of Si NWs with undoped SiO2 shells. The results are discussed in the context of modulation doping by the surface functionalization with SiO2:Al shells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
