Abstract
We have investigated the toggle writing characteristics of free layers where two soft magnetic layers (SLs) were ferromagnetically coupled with a synthetic antiferromagnet (SAF) trilayer through ferromagnetic coupling layers (FCLs). In the free layer, the soft magnetization reversal of each SL alternately induced the spin flop of the SAF trilayer at a low field and the strong antiferromagnetic coupling of the SAF trilayer maintained a high saturation field ( H s). As the coupling strength through the FCL decreased, the spin-flop field ( H flop) decreased and H s increased simultaneously. This can largely decrease the writing field and enlarge the writing margin in toggle MRAMs.
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