Significant phonon drag effect in wide band gap GaN and AlN

Abstract

Understanding the electrical and thermal transport properties of group-III nitride semiconductors is crucial for their electronic and thermoelectric applications. This study investigates the impact of the phonon drag effect, which refers to the momentum exchange between nonequilibrium phonons and electrons, on electronic transport in GaN and AlN. Results show that, even at room temperature, phonon drag significantly enhances mobility and the Seebeck coefficient. The study delves into the specific mechanisms for this.