Abstract
This paper deals with thermal annealing time effects on thermal conductivity and optical properties of GaInAsSb grown on GaSb substrate. An increased thermal conductivity as high as 13 W/mK for GaInAsSb layers annealed during 60 min could be measured by photothermal deflection spectroscopy technique (PDS). In addition, a blue shift around 30 meV for as grown GaInAsSb layer compared to the annealed one for 60 min could be put in evidence. From an other hand, the amplitudes signal of PDS reveal a multiple reflection as function of wavelength which appear for all annealed GaInAsSb. Such multiple reflections reflect both a high crystalline quality of the layer and sharp interfaces as well as a good lattice matching between the layer and the substrate. A slight decrease in absorption coefficient is however related to the increase of the reflection coefficient with annealing time.
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