Abstract
We proposed and demonstrated MgZnO metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV) assisted with surface plasmons (SPs) prepared by the radio frequency magnetron sputtering deposition method. After the decoration of their surface with Pt nanoparticles (NPs), the responsivity of all the electrode spacing (3, 5, and 8 μm) photodetectors were enhanced dramatically; to our surprise, comparing with them the responsivity of larger spacing sample, more SPs were gathered which are smaller than others in turn. A physical mechanism focused on SPs and depletion width is given to explain the above results.
Highlights
ZnO is an attractive wide direct band gap (~ 3.37 eV) oxide semiconductor featuring radiation hardness and environment friendliness
Due to the responsivity of larger spacing sample, more surface plasmons (SPs) were gathered which are smaller than others, demonstrating that this method is a powerful complement for the improving performance of photodetectors
The intensities of the without Pt NPs and with sputtering Pt NP MgZnO peaks are nearly the same, which can prove that the sputtering deposition Pt NPs deposited on the surface of MgZnO films and had no effect on the crystal quality of the films
Summary
ZnO is an attractive wide direct band gap (~ 3.37 eV) oxide semiconductor featuring radiation hardness and environment friendliness. For the fabrication of high-performance ZnO-based UV photodetectors, a common and effective method is improving the material quality and optimizing the device technology, but this is usually a long-term process [1–7]. The MgZnO UV photodetectors with different active layers and electrode spacings have been designed and fabricated.
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