Abstract

Polycrystalline MgB 2 samples with 10 wt.% silicon powder addition were prepared by an in situ reaction process. Two different Si powders, one with coarse (44 μm) and the other with nano-size (<100 nm) particles were used for making samples. The phases, microstructures, and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was observed that the samples doped with nano-sized Si powder showed a significantly improved field dependence of the critical current over a wide temperature range compared with both undoped samples and samples with coarse-Si added. J c is as high as 3000 A/cm 2 in 8 T at 5 K, one order of magnitude higher than for the undoped MgB 2. X-ray diffraction results indicated that Si had reacted with Mg to form Mg 2Si. Nano-particle inclusions and substitution, both observed by transmission electron microscopy, are proposed to be responsible for the enhancement of flux pinning in high fields. However, the samples made with the coarse-Si powders had a poorer pinning than the undoped MgB 2.

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