Abstract

Ti5Si3/TiAl composites were successfully prepared by pressure infiltration and subsequent reactive annealing. Final microstructure of Ti5Si3/TiAl composites was dependent on the reactive annealing temperature, which varied from 1350 °C to 1420 °C, two typical microstructures could be achieved: (i) An unique core-shell structure (Core: fully lamellar α2-Ti3Al/γ-TiAl with in-situ synthesized Ti5Si3 particles predominantly distributed at the interfaces of α2/γ lamellar colonies; Shell: equiaxed γ-TiAl with Ti5Si3 particles distributed in γ grain boundaries); And (ii) A novel quasi-network structure composed of fully lamellar α2/γ and a majority of Ti5Si3 particles with a quasi-network distribution. The formation of the two microstructures could be attributed to the chemical composition heterogeneity which was caused by the difference in interdiffusion rate of Ti and Al elements in different annealing temperatures. The comparative investigations on high temperature tensile properties and creep behavior showed that the core-shell Ti5Si3/TiAl composites exhibited a better specific strength (165 MPa⋅g−1⋅cm3) and higher ultimate tensile strength (633 MPa) at 800 °C, which was 12 % higher than that of the quasi-network Ti5Si3/TiAl composites. While the creep behavior analysis showed that in compassion with equiaxed γ phase, the slip distance of dislocations in fully lamellar α2/γ phase was shorter, impeding the motion of dislocations more effectively. And core-shell Ti5Si3/TiAl composites possessed a large number of grain boundaries concentrating in the shell which became weaker in the high temperature, facilitating the formation of creep pores in the shell and the final premature fracture. Hence, the quasi-network Ti5Si3/TiAl composites containing a higher content of fully lamellar α2/γ exhibited a better creep resistance than that of core-shell Ti5Si3/TiAl composites. More importantly, the steady state creep rate at 750 °C under the fixed stress of 250 MPa of quasi-network Ti5Si3/TiAl composites was relatively low, only 3.305 × 10−8 s−1, comparable to that of third-generation TiAl alloys.

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