Significance of time-of-flight ion energy spectrum on energy deposition into matter by high-intensity pulsed ion beam

Abstract

AbstractEnergy deposition by high-intensity pulsed ion beam into a metal target has been studied with time-of-flight (TOF) of ions which can be related to the original ion kinetic energy E0 and the ion mass with $t_{\rm TOF} \propto 1/\sqrt{2E_{0}/m_{i}}$. It is found that the TOF effect has a profound influence on the kinetic energy distribution of implanted ions and subsequent energy deposition process into the target. The HIPIB of mixed H+ and C+ was extracted from a magnetically insulated ion diode at a peak accelerating voltage of 350 kV, leading to an ion current density of 300 A/cm2 at the target. The widespread ion energy spectrum remarkably varied in shape as arriving at the target surface, from the original Gaussian-like of 80-ns duration to a pulse form of a sharp front and a long tail extending to about 140-ns duration. Energy loss of the mixed ions into a Ti target was simulated utilizing a Monte Carlo method. The energy deposition generally showed a shallowing trend and could be divided into two phases proceeded with sequent arrivals of H+ and C+. Note that, the peak value of deposited energy profile appeared at the beginning of mixed ion irradiation phase, other than the phase of firstly arrived H+ with peak kinetic energy and peak ion current. This study indicated that TOF effect of ions greatly affects the HIPIB-matter interaction with a kinetic energy spectrum of impinging ions at the target, noticeably differing from that of original output of the ion source; consequently, the specific energy deposition phenomena of the widespread ion energy can be studied with the TOF correlation of ion energy and ion current, otherwise not obtainable in common cases assuming fixed ion energy distribution in accordance with the original source output.