Abstract
The hole capture and emission characteristics of deep levels in p-type detector-grade high-purity germanium have been investigated using double lock-in DLTS. The long voltage pulses applied to the high-resistivity semiconductor and the double lock-in mode necessitate corrections in order to derive the signature and the capture cross section accurately. The dominant deep levels that are probably all copper related have sigma p values in the range 10-12-10-13 cm2; they are regarded as deep acceptors which may cause important hole trapping and resolution loss in nuclear detectors.
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