Abstract
A simulation of signals in silicon microstrip detectors (p +–n–n +) has been written. Electron–hole pairs are created by electrons from 90Sr beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theorem are integrated and shaped. For irradiated sensors, trapping is included in the drift simulation. Using many Monte Carlo generated events, the charge collection efficiency (CCE) is calculated as a function of shaping time, applied voltage, and temperature. Results are compared with CCE measurements of unirradiated and irradiated strip detectors using readout chip (SCT 32A) with 25 ns peaking time.
Highlights
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Summary
ÓÐÐ Ø ÓÒ Æ Ò Ý × Ð ÙÐ Ø × ÙÒ Ø ÓÒ Ó × Ô Ò Ø Ñ ÔÔÐ ÚÓÐØ Ò.
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