Abstract
Transmission characteristics of integrated linear dipole antennas fabricated on Si substrates were investigated for inter-chip signal transmission of wireless interconnections of Si ultra-large scale integrated circuits. Linear dipole antennas 1–6 mm long were fabricated on oxidized P-type Si substrates with resistivities of 10, 79.6, and 2290 Ω·cm. The transmission characteristics were investigated in the frequency and time domains. The transmission gain of a 4-mm-long dipole antenna fabricated on a 2.29 kΩ·cm resistivity Si substrate was -10 dB for a distance of 3 mm. A Gaussian monocycle pulse with a pulse width of 70 ps and a bandwidth of 20 GHz was transmitted and received successfully between Si chips with an air gap.
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