Abstract
Some properties of hydrogenated amorphous silicon diodes are described. Back biased diodes of the Schottky, p-i-n type, in thicknesses ranging from 5–15 μm, have been tested with 6 MeV alpha particles and with 1 and 2 MeV protons. Large signal saturation, due to electron-hole recombination, occurs for high LET particles. Diodes have been exposed to fast neutron fluences up to 10 13 cm −2 and shown to have better radiation resistance than similarly exposed crystalline silicon detectors. From our measurements we extrapolate that minimum ionizing particles can be detected with stacked layers 100–120 μm thick, with adequate signal/noise levels.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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