Abstract
We describe the signal modulation of super read only memory (ROM) with thermally activated aperture model using a three-dimensional finite-difference time-domain method. The thermally activated aperture is modeled using a spatially varied refractive indices of the GeSbTe layer. No meaningful signal modulation is observed without thermally activated aperture below the resolution limit of 120 nm. When we open the thermally activated aperture by considering the temperature dependence of the refractive indices in the GeSbTe layer, the 2.8 and 1.7% signal modulations are observed for 120 and 80 nm pits, respectively. The experimentally observed signal modulation under the resolution limit can be explained using the thermally activated aperture model.
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