Abstract
The signals produced in thick hydrogenated amorphous silicon p-i-n detectors were measured using incident light pulses with different mean free paths. The signal shapes as a function of bias potential were analyzed in terms of the mobilities and mean free paths of the electrons and holes. The latter were measured by transient photoconductivity methods using a pulsed nitrogen-dye laser system. Measurements on relatively thick samples of a-Si:H show ionized dangling bond densities in the range of 6-70*10/sup 14/ cm/sup -3/. While the electron mobility increases by approximately 20% at high field, hole mobility increases by approximately 40% from the low-field values. This increase in mobility is attributed to dispersion of the transport, but there may be a Poole-Frenkel effect involving the nondispersive electrons.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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