SIGMA: A Set-up for In-situ Growth, Material modification and Analysis by ion beams

Abstract

We present a set-up for in-situ non-destructive high-resolution composition depth profiling by ion beams developed at the 5 MV 15 SDH-2 Tandem accelerator at the Ångström laboratory at Uppsala University. The scattering chamber allows thin film deposition, modification and characterization which can be used to study the very initial stages of near-surface processes such as thin film growth, oxidation, annealing or ion implantation. We describe the available instrumentation with its specifications in detail and present experimental applications, i.e. the characterization of reactive in-situ thin film growth and controlled oxidation, as well as a study of ion implantation and the impact of thermal annealing and surface oxidation on the implantation profiles.