Abstract
For conventional MOSFETs band-to-band tunnelling has to be avoided because it causes unintentional leakage currents. On the other hand the Tunnel FET, which basically consists of a gated pin-diode, takes advantage of tunnelling. The influence of technological parameters on device performance as well as scaling rules will be discussed. Finally it will be shown that band gap engineering with SiGe and the incorporation of high-k dielectrics strongly improve current slope and maximum ON current. A future device performance comparable or even better than the conventional MOSFET is predicted.
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