SiGe T/R Modules for Ka-Band Phased Arrays

Abstract

This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12 mum SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5 dB gain and 2.9 dB noise figure at 34 GHz. The 42% fractional-bandwidth PA has a small-signal gain of 13 dB and a saturated output power of 19.4 dBm with 11.2% PAE from 32 to 33 GHz. The RMS phase error of the 4-bit phase shifter is less than 7.5deg from 30-38 GHz. This paper presents the individual components of the BiCMOS T/R module, and the entire T/R module performance will be measured and presented at the conference.