Abstract
SiGe films were deposited and in situ doped by RF-magnetron co-sputtering on oxidized and bare silicon wafers. Post-deposition annealing was done in the temperature range from 580 to 950 °C. Structural and compositional characterization was performed by XRD, Raman, TEM and XPS analysis. Electrical properties were obtained by four-point probe measurements on SiGe films, and current–voltage measurements on SiGe(p +)–Si(n) diode structures. Excellent rectifying properties of SiGe–Si diodes were observed, and the conduction current mechanisms at different annealing temperatures were discussed.
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