SiGe Selective Amplifier of Microwave Range with High Asymptotic Attenuation

Abstract

The circuit principle of construction of the lowspeed selective amplifiers (SA) of microwave range on the energy-efficient converters voltage-current is developed. The proposed solution provides the possibility of cascade connection of several SA without additional loops of matching of the static mode. The principle of symmetry of the frequencydependent feedback loop underlies in the circuit construction. The reviewed architecture of SA in contrast with the wellknown ones reduces the asymptotic attenuation not only in the traditional high-frequency range but also in low-frequency one without a separating capacitor. This effect is achieved by using CMOS transistors in the input differential stage. The results of the mathematical analysis and simulation of SA on 0.25 um SiGe process are given. Shown the possibility of parametric optimization the sensitivity functions of quasi-resonance frequency and Q-factor SA instability parameters of passive elements.