SiGe HBT 제작을 위한 실리콘 게르마늄 단결정 박막의 RBS 분석

Abstract

In this paper, the strained Si<TEX>$_{0.9}$</TEX>Ge<TEX>$_{0.1}$</TEX> epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the <TEX>${Si}_0.9{Ge}_0.1$</TEX>epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between <TEX>$850^{\circ}C$</TEX> - <TEX>$1000^{\circ}C$</TEX> for 30min were analyzed to investigate the post thermal annealing effect on the grown<TEX>${Si}_0.9{Ge}_0.1$</TEX>epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown <TEX>${Si}_0.9{Ge}_0.1$</TEX> epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the <TEX>${Si}_0.9{Ge}_0.1$</TEX> epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between <TEX>$900^{\circ}C$</TEX> - <TEX>$1000^{\circ}C$</TEX>for 20 sec, or <TEX>$950^{\circ}C$</TEX>for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at <TEX>$950^{\circ}C$</TEX> for 20 sec.sec.sec.