Abstract
For the purpose of calibrating the nonlocal Kane band-to-band tunneling model for Si1-xGex based on TCAD simulations, SiGe p-i-n tunnel diodes are fabricated by epitaxial growth. The quality of the tunnel junction is examined by the ideality factors of the diodes and the band-to-band tunneling regime is determined based on activation energy extractions. By comparing experimental data to simulations with theoretically calculated prefactors of Kane's model, we conclude that the TCAD simulator overestimates the tunneling current in strained Si1-xGex diodes.
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