Abstract
An investigation of the performance and reliability issues associated with operating silicon-germanium (SiGe) amplifier and buffer circuits at temperatures up to 300°C is presented. Using bandgap engineering, SiGe BiCMOS technology effectively combines III-V transistor speeds with the cost and integration advantages associated with CMOS manufacturing. In addition to known advantages for operation in both cryogenic and radiation-intense environments, recent work has demonstrated the potential for SiGe devices and circuits for high temperature applications. Using a first-generation, commercially-available bulk SiGe BiCMOS platform, an output buffer designed to drive low-impedance loads functions with minimal performance degradation in ambient temperatures up to 300°C. The second circuit, an OTA-style operational amplifier designed to drive large capacitive loads, maintains a DC gain of 55 dB and a unity gain bandwidth of 60 kHz up to 250°C. This opamp is a suitable candidate for the front-end of a charge am...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
