Abstract
Electroluminescent device (ELD) using nanocrystalline silicon (nc-Si) was fabricated by annealing of co-sputtering of Si and silicon dioxide (SiO2) targets and subsequently hydrofluoric (HF) acid solution treatment. The HF treatment made effective electron injection into the nc-Si and the resultant decrease in resistance of the ELD. The HF treatment also made Pb-center, which act as a role of non-radiative recombination center, compensate with hydrogen atoms. From above effects of the HF treatment, the HF-treated ELD emits high efficiency red light with external quantum efficiency of 0.35% under low operating voltage of +4.5 V. Moreover, intensity of the red light emission from the HF-treated ELD is stable for continuous operation above 10 days (operating time of 15000 min).
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