Abstract
We report on the controlled growth of Si doped GaN/AlN quantum dot (QD) superlattices, in order to tailor their intersubband absorption within the 1.3–1.5 µm telecommunication wavelengths. The QD size is tuned by modifying the amount of GaN in the QDs and the growth temperature. Silicon can be incorporated in the QDs to populate the first electronic level, without significant perturbation of the QD morphology. As a proof of the capability of these structures for infrared detection, a quantum-dot intersubband photodetector at 1.38 µm with lateral carrier transport is demonstrated. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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