Side-wall oxide isolation self-aligned technique for SiGe/Si HBTs

J.X Chen,G.V Hansson,D.S Zou,D.F Wang,J.Y Du,G.D Shen,M Willander,W.X Ni,J.R Han,X Dong,S.M Zhang,G Gao,Y Yuan

doi:10.1109/icsict.1995.500241

Side-wall oxide isolation self-aligned technique for SiGe/Si HBTs

J.X Chen, G.V Hansson + Show 11 more

https://doi.org/10.1109/icsict.1995.500241

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Publication Date: Oct 24, 1995

Affiliation: Beijing University of Technology, Beijing Polytechnic, Linköping University

#Maximum Frequency Of Oscillation #Early Voltage + Show 8 more

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Abstract

A low temperature side-wall oxide isolation self-aligned technique for SiGe/Si HBTs has been developed, by which the SiGe/Si HBTs with advanced performances have been fabricated. Its current gain is about 70 at 300 K and is more than 2000 at 77 K. It also has superior saturation characteristics with Early voltage over 200 V. Moreover, using this technique, the transverse base resistance is reduced by 50%, resulting in the cutoff frequency and the maximum frequency of oscillation being increased considerably. N/sub F/ is reduced by 3 dB, compared with those devices fabricated by the conventional Si techniques.

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