Abstract
Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n+-GaAs wires employing CCl2F2/He as the etch gas. A comparison of the induced sidewall damage is made using room-temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low-temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage.
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