Abstract
We propose and demonstrate a technique for the sidelobe suppression in an InP/InGaAsP semiconductor grating-assisted codirectional coupler (GACC) optical filter. By employing selective area growth (SAG) in an InP separation layer, the epitaxial film thickness was spatially controlled so that the coupling coefficient distribution between two waveguides has the Hamming functional form. Most sidelobes are suppressed below -12 dB, which is low compared to the conventional GACC filters.
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