Abstract

The semiconductor laser diode has the advantage of low cost, high efficiency, and compactness, but the beam divergence is too large to directly use. The phase-locked laser array is an efficient way to control the lateral lasing mode, which can help to achieve narrow farfield.. Though the lasing mode of phase-locked laser array can be an in-phase mode via Ywaveguide, integrated with phase shifter and external cavity, it still has a large side lobe in the farfiled. We demonstrated an on-chip phase and amplitude manipulation method to suppress the side-lobe in the farfield. The intensity of the sidelobes decrease from 0.307 to 0.109 and the integral energy of the main lobe increase from 52.5% to 60.5%

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.