Abstract
We study GaAs 0.8 μm MESFETs that show a threshold for sidegating. In these devices, the current from the sidegate saturates near the threshold voltage, supporting the idea that sidegating is produced when a stationary Gunn domain forms under the channel in the semi-insulating substrate. We compare the metal semiconductor field effect transistor to sidegated resistors and show that the same mechanism applies there, but supplemented by another mechanism, probably associated with the surface.
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