Abstract
We study GaAs 0.8 μm MESFETs that show a threshold for sidegating. In these devices, the current from the sidegate saturates near the threshold voltage, supporting the idea that sidegating is produced when a stationary Gunn domain forms under the channel in the semi-insulating substrate. We compare the metal semiconductor field effect transistor to sidegated resistors and show that the same mechanism applies there, but supplemented by another mechanism, probably associated with the surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.