Abstract
The sidegating effect in a MBE-grown HFET GaAs structure is considerable and persists to large distances. On the other hand, the leakage current is very low. A model that takes into account the unusual features of sidegating in this structure and is consistent with other studies of similar structures is proposed. On the basis of the model, a change in the isolation process was implemented. This resulted in a large reduction of the sidegating effect and confirmed the main features of the model. >
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