Side effects in InAlN/GaN high electron mobility transistors

Abstract

In this work side effects in HEMTs (high electron mobility transistors) that are kink effect, breakdown voltage, self-heating effect, and drain lag are studied using SILVACO-TCAD software. Our InAlN/GaN structure shows a very good scalability in different applications. Simulation results we obtained for our short gate length structure demonstrated an excellent current density as high with a value of 644mA/mm, a cutting frequency of 385GHz, a maximum frequency of 810GHz, a maximum efficiency of 23% for x-Band, a maximum breakdown voltage of 275V, and an ON/OFF current density ratio higher than 8×108. These results have been obtained using hydrodynamics transport models. In all our simulations, the physical simulation model adopted was the hydrodynamic transport model that accounts for the peculiarities of the GaN material. All the models used in our study were implemented in our simulations and carefully calibrated. A high accuracy for all relevant characteristics was achieved.