Siconi Process Applications Study for 28nm Technology Node and Beyond

Abstract

This work presents some Siconi process applications in 28nm technology node and beyond fabrication steps, such as STI/ILD gap-fill trench profile modification, fin or AA oxide recess (adjustment of fin or AA height) and dummy gate ox removal in 20nm planar structure. Morphological results indicate that Siconi process can reduce trench gap-fill challenge in STI/ILD process, and it can achieve perfectly filled trenches, better AA or Fin/STI oxide height control. Morphological and electrical results also indicate that Siconi clean for dummy oxide removal can reduce CESL/HARP loss, which benefits in MG height control and HKMG material residue elimination after metal gate CMP, without EOT penalty.