Abstract
Abstract Herein, we propose a novel method for characterization of the quality of SiCN films deposited on crystalline Si. In this method, the quantity of pinholes in the SiCN films is determined simply by microscopic observation of the SiCN/Si(100) sample after immersion in potassium hydroxide solution. Etch pits are formed on the Si substrate by permeation of potassium hydroxide solution through the pinholes in the SiCN film. This method might be further extended to various kinds of thin films deposited on crystalline Si as a simple pinhole characterization method.
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