Abstract
This paper presents the gate driver with fast switching and low switching loss for SiC-MOSFETs. The proposed driver consists of very simple gate boost circuit and speed up circuit and also it is cost-effective. Normally, conventional gate drive methods have some trade-offs between switching losses and noise. The proposed gate driver can reduce switching losses without increasing surge and ringing voltage and current. The proposed gate driver is able to break the trade-offs of switching characteristics.
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Schedule a callMore From: The transactions of the Institute of Electrical Engineers of Japan.C
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