SiCl 3CCl 3 as a novel precursor for chemical vapor deposition of amorphous carbon films

Abstract

Amorphous carbon films, characterized by XRD, AFM, SEM and Raman, were deposited from SiCl 3CCl 3 on quartz substrates at 773–1273 K by low pressure chemical vapor deposition using a hot-wall reactor. XPS studies showed that the films grown at 773 K contained 90% C and 10% Cl, while the films grown at 1273 K contained 100% C. SiCl 4, CCl 4 and Cl 2CCCl 2 were detected by on-line FT-IR studies. The extrusion of dichlorocarbene, :CCl 2, from SiCl 3CCl 3 should provide the source of carbon in the reaction. On Si substrates, an etching process at the film-substrate interface assisted the lift-off of the films from the substrates. The C films curled and formed rolls.