Abstract
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theoretical analysis that examines how the characteristics of a 1200V SiC-MOSFET change if device design is re-optimised for 600V blocking voltage. Afterwards, a range of commercial devices (1200V SiC-JFET, 1200V SiC-MOSFET, 650V SiC-MOSFET and 650V GaN-HEMT) with the same current rating are characterised experimentally and their conduction losses, inter-electrode capacitances and switching energy Esw are compared, where it is shown that GaN-HEMT has smaller ON-state resistance, inter-electrode capacitance values and Esw than SiC devices. Finally, in order to reduce device Esw, a zero voltage switching circuit is used to evaluate all the devices, where device only produces turn-OFF switching losses and it is shown that GaN-HEMT has less switching losses than SiC device in this soft switching mode. It is also shown in the paper that 1200V SiC-MOSFET has smaller conduction and switching losses than 650V SiC-MOSFET.
Highlights
Electrical vehicle (EV) is an essential technology in the global fight to reduce environmental pollution and harmful gas emissions [1]
Conduction loss and switching loss of silicon carbide (SiC) and gallium nitride (GaN) power semiconductor devices are compared in the paper
Due to SiC material low mobility, it is found that ON-state resistance RON(mΩ) and inter-electrode capacitance (F) of 1200 V SiC device is smaller than 600 V SiC device if two devices have the same current rating, suggesting a lower conduction loss and switching loss of 1200 V SiC device
Summary
Electrical vehicle (EV) is an essential technology in the global fight to reduce environmental pollution and harmful gas emissions [1]. Commercial SiC transistors (JFET, MOSFET) can block voltage above 1200 V and GaN transistor (HEMT) is able to withstand a maximal voltage of 650 V, while they can conduct current from a few amperes to a few tens of amperes Both SiC and GaN devices can be applied in EVs, in which the voltage rating of different electrical systems is found to be from low voltage to high voltage. Afterwards, different commercial SiC and GaN power devices ON-state resistance and inter-electrode capacitances values are compared. Those devices switching energy under hard and soft switching conditions are compared and conclusions are given . It can be summarised that when device blocking voltage reduces from 1200 to 600 V, device RON,sp reduces approximately half
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