Abstract
4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies of the optical and electrical properties of initial and irradiated structures with Schottky barriers were carried out in temperature range 23-180°C. Swift heavy ion stimulated changes in photosensitivity and electrical characteristics of the initial and irradiated detectors are explained in terms of the fluctuation traps model with the subsequent thermal dissociation.
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