Abstract
In this paper, silicon carbide/silicon dioxide (SiC/SiO 2 ) filler with core/shell structure, as a filler in epoxy resin (EP), is studied. The effect of the thickness of the SiO 2 shell is studied as it affects the microstructure and electrical properties of the SiC/SiO 2 /EP composites at various temperatures. Compared with SiC/EP composites, the SiC/SiO 2 /EP composites show outstanding electrical properties. The nonlinear coefficient of the 4 nm-SiC/SiO 2 /EP composites increases from 2.88 (5 wt% SiC/EP) to 3.79, and the breakdown field strength increases 1.23 times. With increasing temperature, the electrical conductivity increases and the threshold field strength decreases. Moreover, as the SiO 2 shell thickness increases, the breakdown field strength of the composite increases, and shows a weaker temperature dependence.
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