Abstract
Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters and circuit breakers built with silicon (Si) switches are too bulky and inefficient to be used in the microgrid system. The development of high-voltage power devices based on silicon carbide (SiC) will be a critical component in building the microgrid with distributed and fluctuating sources of power generation. In this paper, the physics and technology of high-voltage (>10 kV) 4H-SiC power devices, namely MOSFETs and insulated gate bipolar transistors are discussed. A detailed review of the current status and future trends in these devices is given with respect to materials growth, device design, and fabrication processing.
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