Abstract
In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS ), gate charge (Q G ) and gate-to-drain charge (Q GD ) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON ), tremendously enhanced figures of merit (R ON × Q G and R ON × Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications.
Highlights
SiC MOSFETs are generally treated as a replacement of Si counterparts in power electronic applications, owing to the superior material properties [1]–[5]
The parasitic body diode of a conventional SiC MOSFET (SiC C-MOSFET) is not suitable for use because of the following two reasons: one is the large knee voltage due to the wide band gap property of SiC material [7], which would lead to a high conduction loss; the other is the bipolar degradation issue induced by the electron-hole recombination [8]
The easy-to-implement SiC MCD-MOSFET is studied in this paper utilizing TCAD simulations
Summary
SiC MOSFETs are generally treated as a replacement of Si counterparts in power electronic applications, owing to the superior material properties [1]–[5]. The source-drain diode inherently provided by the MOSFET, referred to as the body diode, is always utilized as a freewheeling diode, such as in a voltage source inverter [6]. This is attractive since it enables the engineer to cut the number of power semiconductor components to half, significantly reducing the cost of the system. It comes to our attention that a Si-based power MOSFET with built-in channel diode has been proposed to enhance the reverse recovery performance of the device [15]. ZHOU et al.: SiC PLANAR MOSFETs WITH BUILT-IN REVERSE MOS-CHANNEL DIODE FOR ENHANCED PERFORMANCE TABLE 1. What’s more, the influence of parameters variation on the device characteristics is addressed as well
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