Abstract
SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.
Highlights
Silicon carbide (SiC) has been widely used in the fields of electronic and optic devices due to its unique properties, such as a wide band gap of 2.3–3.3 eV, high strength, and Young’s modulus, good resistance to oxidation and corrosion, excellent thermal conductivity, and electron mobility [1,2,3,4]
We report a novel method to fabricate b-SiC nanowires by using a high-frequency induction furnace with a graphite tube
After heating the source materials in graphite tube in argon atmosphere, bright blue powders can be observed in the tube, which were characterized as b-SiC nanowires with core-shell structures
Summary
Silicon carbide (SiC) has been widely used in the fields of electronic and optic devices due to its unique properties, such as a wide band gap of 2.3–3.3 eV, high strength, and Young’s modulus, good resistance to oxidation and corrosion, excellent thermal conductivity, and electron mobility [1,2,3,4]. We report a novel method to fabricate b-SiC nanowires by using a high-frequency induction furnace with a graphite tube. A mixture of commercial SiO and the carbon black powder with loose structures pretreated by an arc-discharge plasma method was used as the starting materials. After heating the source materials in graphite tube in argon atmosphere, bright blue powders can be observed in the tube, which were characterized as b-SiC nanowires with core-shell structures.
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