Abstract
Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C 3H 6 were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20–70 nm are single crystalline β-SiC and the growth direction is along [111]. A growth mechanism of β-SiC nanowire networks is discussed.
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