Abstract
The paper proposes a method for determining the instrumental function for measuring the surface potential in the Kelvin probe microscopy mode. The method is based on the use of SiC samples with regions of single-layer and double-layer graphene as a test structure. The measurement of potential profiles along different directions on such a surface makes it possible to determine the instrumental function for measurements of the potential. Using the instrumental function, one can perform a deconvolution procedure and restore the exact surface potential. Keywords: Scanning probe microscopy, Kelvin probe microscopy, deconvolution, graphene, silicon carbide.
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