Abstract
A SiC-glass interlayer was prepared as a diffusion barrier to suppress inter-diffusion between MoSi2 coating and an Nb-Si based alloy, and its oxidation behavior at 1250 ℃ and 1400 ℃ was investigated. The results revealed that the SiC-glass diffusion barrier effectively inhibited the inter-diffusion between silicide coating and substrate, and the IDZ thickness is 47% lower than that of the coating without diffusion barrier after oxidation at 1250 ℃ for 500 h. At 1400 °C, the SiC-glass diffusion barrier also can maintain a good stability and retard the inter-diffusion of elements between the coating and substrate effectively.
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