Abstract
基于一束高取向排列的SiC纳米线，本文制备了一种新型的紫外光探测器，并测试研究了其光电性能。采用传统化学气相沉积技术，以二茂铁为催化剂，通过聚合物热解的方法制备了长度达数厘米、直径为100~200 nm的SiC纳米线。探测器由导电银浆固定一束高取向排列的SiC纳米线到器件基座两个引脚上形成，其光电性能测试研究表明，器件暗电流很小、并且在254 nm紫外光照射时，其光电流迅速变大；器件反应时间很短而回复时间相对较长。 A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameter of SiC nanowires varied from 100 to 200 nm while they were some centimeters long. A bundle of nanowires was fixed onto two legs in a custom base by conductive silver paste to form the UVPDs. The electrical measurements of the device show a big increase of current when explored the device to 254 nm UV light, and the rise time of the device is very short, but the fall time is relatively long.
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