Abstract
A silicon carbide epitaxial reactor cleaning process was designed accounting for the exothermic reaction heat between silicon carbide and chlorine trifluoride gas. To avoid the peeling of the susceptor surface coating film, the spontaneous temperature increase due to the exothermic reaction heat was moderated by adding the nitrogen gas. The particle-type silicon carbide deposition could be effectively removed without causing any damage of susceptor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
